科学研究

金属氧化物半导体薄膜与电子器件

发布日期: 2019年05月20日 18:39

具体包括薄膜晶体管器件物理与工艺、柔性和透明电子技术、新型纳米光电器件等。在JACS、Nano Letters、IEEE Electron Device Letters等国际期刊发表学术论文30余篇,授权国家发明专利9项,近几年取得的主要研究成果包括:

(1) xinan zhang; binghao wang; Wei Huang; Gang Wang; Weigang Zhu; Zhi Wang; Weifeng Zhang; Antonio Facchetti; Tobin J. Marks, Oxide-Polymer Heterojunction Diodes with a Nanoscopic Phase Separated Insulating Layer, Nano letters, 2019.01.10, 19(1): 471~476

(2) xinan zhang; binghao wang; Wei Huang; Yao Chen; Gang Wang; Li Zeng;Weigang Zhu; Michael J. Bedzyk; Weifeng Zhang; Julia E. Medvedeva; Antonio Facchetti; Tobin J. Marks, Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors: Interplay of Experiment and Theory, Journal of the American Chemical Society, 2018.10.3, 140: 12501~12510

(3) xinan zhang; Binghao Wang; Xianwen Sun; Haiwu Zheng; Shuang Li; Penglin Zhang; weifeng zhang, Highly Transparent and Conductive W-Doped ZnO/Cu/W-Doped ZnO Multilayer Source/Drain Electrodes for Metal-Oxide Thin-Film Transistors, IEEE Electron Device Letters, 2018.7.20, 39(7): 967~970

(4) shang li; xinan zhang*; Penglin Zhang; Xianwen Sun; Haiwu Zheng; Weifeng Zhang, Preparation and Characterization of Solution-Processed Nanocrystalline P-Type Cualo2 Thin-Film Transistors, Nanoscale Research Letters, 2018.8.30, 13(259)

(5) RuiJuan Zhu; xinan zhang*; JunWei Zhao; RuoPing Li; WeiFeng Zhang, Influence of illumination intensity on the electrical characteristics and photoresponsivity of the Ag/ZnO Schottky diodes, Journal of Alloys and Compounds, 2015.5.15, 631: 125~128